The modulation bandwidth characteristics of oxide-confined post-type VCSELs and the effect of parasitic parameters are reported. From the measured and calculated modulation spectra, the intrinsic modulation limits of VCSEL devices are extracted and compared with the trench-type VCSEL fabricated from same wafer. The high-speed modulation bandwidth of 13.4 GHz was obtained from the 850-nm oxide-confined VCSELs.


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    Title :

    High-speed modulation of 850-nm vertical-cavity surface-emitting lasers


    Contributors:
    Lim, D.H. (author) / Hwang, S.M. (author) / Nam, S.H. (author)


    Publication date :

    2001-01-01


    Size :

    228350 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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