Femtosecond Ti: sapphire laser was employed for ultrashallow junction formation in the dopant activation process. Activation of both p-type and n-type dopants were studied, and only very short diffusion length was observed after activation process.
Near-Infrared Femtosecond Laser activation of shallow B and P doped layers
2005-01-01
199428 byte
Conference paper
Electronic Resource
English
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