In this report, our recent results of an integrated device are reported. The integrated superluminescent diode (SLD) consisting of an LED/laser diode was fabricated using an AlGaAs SQW heterostructure wafer. A 3 /spl mu/m-wide superluminescent diode with 300-500 /spl mu/m length is aligned with the 3 /spl mu/m-wide input aperture of the tapered amplifier. The amplifier is 1.3-1.5 mm in length and the gain region expands linearly.
Monolithic integration of GaAlAs superluminescent diode with the optical amplifier
1997-01-01
185283 byte
Conference paper
Electronic Resource
English
Monolithic Integration of GaAlAs Superluminescent Diode with the Optical Amplifier
British Library Conference Proceedings | 1997
|Monolithic p-i-n GaAlAs photorefractive devices
IEEE | 1996
|Performance and Reliability of InGaAsP Superluminescent Diode
British Library Online Contents | 1992
|Monolithic p-i-n GaAlAs Photorefractive Devices
British Library Conference Proceedings | 1996
|British Library Online Contents | 2012
|