In this report, our recent results of an integrated device are reported. The integrated superluminescent diode (SLD) consisting of an LED/laser diode was fabricated using an AlGaAs SQW heterostructure wafer. A 3 /spl mu/m-wide superluminescent diode with 300-500 /spl mu/m length is aligned with the 3 /spl mu/m-wide input aperture of the tapered amplifier. The amplifier is 1.3-1.5 mm in length and the gain region expands linearly.


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    Title :

    Monolithic integration of GaAlAs superluminescent diode with the optical amplifier


    Contributors:
    Guotong Du (author) / Yongsheng Zhao (author) / Xuemei Li (author) / Junfeng Song (author) / Weihua Han (author) / Dingsan Gao (author) / Shengli Wu (author) / Devane, G. (author) / Stair, K.A. (author) / Chang, R.P.H. (author)


    Publication date :

    1997-01-01


    Size :

    185283 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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