With the advancement of technology on wide bandgap materials such as silicon-carbide (SiC), there are now better choices of SiC power devices available than ever before. It is widely known that SiC-based switching devices provide significant performance improvements on many aspects including lower power dissipation, higher operating temperatures, and faster switching frequencies compared to conventional Si devices. However, the tremendous benefits of SiC devices have not yet been fully explored by researchers. In this paper, a popular topology of bidirectional DC-DC converter that is suitable for hybrid vehicle or electric vehicle applications is considered. Comparative analyses regarding the power loss reductions of power devices and efficiency improvements are carried out for the converter based on three sets of device combinations, e.g. all-silicon (conventional silicon IGBTs and diodes), hybrid (silicon IGBTs with SiC Schottky diodes), and all-SiC (SiC MOSFETs with SiC Schottky diodes).


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Efficiency comparison of SiC and Si-based bidirectional DC-DC converters


    Contributors:


    Publication date :

    2013-06-01


    Size :

    1025467 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Bidirectional power converters with electric vehicle chargers

    BUNDSCHUH PAUL / ALEXANDER WILLIAM C | European Patent Office | 2017

    Free access

    Topologies of bidirectional PWM dc-dc power converters

    Kazimierczuk, M.K. / Vuong, D.Q. / Nguyen, B.T. et al. | IEEE | 1993


    Control of modular multilevel transformerless cascaded bidirectional converters

    Cong Wang / Guang-lin Sha / Jun Wang et al. | IEEE | 2014