An MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting at 1.3 /spl mu/m with record laser-characteristics and data-transmission rate of 10 Gbit/s has been realized.


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    Title :

    MOVPE-grown 1.3 /spl mu/m emitting VCSEL with GaInNAs active region


    Contributors:
    Ramakrishnan, A. (author) / Steinle, G. (author) / Supper, D. (author) / Pfeiffer, J. (author) / Degen, C. (author) / Stolz, W. (author)


    Publication date :

    2002-01-01


    Size :

    137807 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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