This paper reports the first mid-infrared ring laser diode based on InAs and grown by liquid phase epitaxy (LPE). Coherent emission for a 200 /spl mu/m ring resonator was obtained near 3.0 /spl mu/m at 80 K. The individual modes exhibit hardly any wavelength shift with increasing injection current. The absence of a significant modal wavelength shift confirms that the emission originates from in-plane propagation around the inside perimeter of the mesa due to a whispering gallery mode which is facilitated by total internal reflection with high Q.


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    Title :

    Mid-infrared whispering gallery lasers


    Contributors:
    Wright, D.A. (author) / Krier, A. (author) / Sherstnev, V.V. (author) / Monakhov, A. (author)


    Publication date :

    2003-01-01


    Size :

    78486 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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