In this paper, we report on the performance of compressive strained quaternary InGaAsP quantum well lasers with record thresholds and compare them to InGaAs tensile strained devices with comparable well width and confinement factor. Equally important, these devices were MOCVD grown with tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) instead of arsine and phosphine.


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    Title :

    Low threshold 1.55 /spl mu/m quantum well lasers grown with tertiarybutylarsine and tertiarybutylphosphine


    Contributors:
    Mathur, A. (author) / Dapkus, P.D. (author)

    Published in:

    Proceedings of LEOS'94 ; 2 ; 373-374 vol.2


    Publication date :

    1994-01-01


    Size :

    164179 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Low Threshold 1.55 m Quantum Well Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994




    Direct Evidence for Transport Limited Bandwidth of 1.55 m Quantum Well Lasers

    Hangleiter, A. / Grabmaier, A. / Shoefthaler, M. et al. | British Library Conference Proceedings | 1992