In this paper, we report on the performance of compressive strained quaternary InGaAsP quantum well lasers with record thresholds and compare them to InGaAs tensile strained devices with comparable well width and confinement factor. Equally important, these devices were MOCVD grown with tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) instead of arsine and phosphine.
Low threshold 1.55 /spl mu/m quantum well lasers grown with tertiarybutylarsine and tertiarybutylphosphine
Proceedings of LEOS'94 ; 2 ; 373-374 vol.2
1994-01-01
164179 byte
Conference paper
Electronic Resource
English
Low Threshold 1.55 m Quantum Well Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine
British Library Conference Proceedings | 1994
|Making InP Solar Cells From Tertiarybutylphosphine
Online Contents | 1997
Direct Evidence for Transport Limited Bandwidth of 1.55 m Quantum Well Lasers
British Library Conference Proceedings | 1992
|