In this paper we report a high power THz transmitter operating at 1 kHz repetition rate. This kHz repetition rate gives a high signal-to-noise ratio, which is essential for quantitative study of high-field semiconductor physics. The transmitter is an undoped GaAs wafer with aluminum electrodes separated by a 3 cm gap. The bias to the antenna is provided by a high voltage pulse generator producing 2 /spl mu/s pulses with a peak voltage of up to 40 kV. The THz antenna is illuminated at normal incidence by 150 fs, 800 nm pulses from a Clark-MXR Ti:Sapphire regenerative laser amplifier system running at 1 kHz.
High power terahertz radiation at 1 kHz repetition rate
1995-01-01
163676 byte
Conference paper
Electronic Resource
English
High Power Terahertz Radiation at 1 kHz Repetition Rate
British Library Conference Proceedings | 1995
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