In this paper we report a high power THz transmitter operating at 1 kHz repetition rate. This kHz repetition rate gives a high signal-to-noise ratio, which is essential for quantitative study of high-field semiconductor physics. The transmitter is an undoped GaAs wafer with aluminum electrodes separated by a 3 cm gap. The bias to the antenna is provided by a high voltage pulse generator producing 2 /spl mu/s pulses with a peak voltage of up to 40 kV. The THz antenna is illuminated at normal incidence by 150 fs, 800 nm pulses from a Clark-MXR Ti:Sapphire regenerative laser amplifier system running at 1 kHz.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    High power terahertz radiation at 1 kHz repetition rate


    Contributors:
    Budiarto, E. (author) / Jeong, S. (author) / Son, J. (author) / Margolies, J. (author) / Boker, J. (author)


    Publication date :

    1995-01-01


    Size :

    163676 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    High Power Terahertz Radiation at 1 kHz Repetition Rate

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    High-power high-repetition-rate all-solid-state UV laser

    Kojima, T. / Konno, S. / Fujikawa, S. et al. | IEEE | 1999


    A high repetition rate (50kHz) high power (10W) gold vapour laser

    Marshall, G. D. / Coutts, D. W. / Guo li Taiwan da xue et al. | British Library Conference Proceedings | 2003


    High Pulse Repetition Rate CuBr-Laser

    Evtushenko, G. / Klimkin, V. / Sukhanov, V. et al. | IEEE | 1998


    High power, high repetition-rate picosecond Nd:YVO/sub 4/ regenerative amplifier

    Kleinbauer, J. / Reuter, S. / Knappe, R. et al. | IEEE | 2003