Summary form only given. Advances in optical transmission systems have created needs for higher performance detectors on their receiving end. Three requirements that have driven detector design have been lower cost, higher sensitivity, and wavelength selectivity. To meet each of these challenges, a new fabrication technique called wafer fusion has been used. Cost issues have been addressed by using fusion to integrate InGaAs on Si with the aim of eventual integration with VLSI circuitry.
High-speed wafer-fused photodetectors
1997-01-01
145150 byte
Conference paper
Electronic Resource
English
High-Speed Wafer-Fused Photodetectors
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