We have successfully fabricated high performance 0.98 /spl mu/m InGaAs-InGaAsP-AlGaAs diode lasers. This material system demonstrated the advantages of flexibility in structure design, simple epitaxial growth, improvement of surface morphology, low vertical beam divergence, high efficiency, high characteristic temperature, and superior reliability.
High performance InGaAs/InGaAsP/AlGaAs diode lasers (/spl lambda/=0.98 /spl mu/m) grown by MOCVD
1999-01-01
165655 byte
Conference paper
Electronic Resource
English
High Performance InGaAs/InGaAsP/AlGaAs Diode Lasers (Lambda=0.98 mum) Grown by MOCVD
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