Superluminescent diodes with broad emission bandwidth characteristics and the mechanism of carrier distribution in the active layer are explored. Using InP substrate with five 6 nm InGaAsP quantum wells and two 15 nm InGaAs quantum wells, we get a very broad emission spectrum. The spectral width is nearly 400 nm, almost covering the range from 1250 nm to 1650 nm.


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    Title :

    Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band


    Contributors:


    Publication date :

    2003-01-01


    Size :

    67400 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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