The characteristics of metal organic chemical vapor deposition (MOCVD) grown InGaAs quantum dot infrared photodetectors based on the quantum-dots-in-a-well (DWell) structure are reported.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    InGaAs quantum dots-in-a-well photodetectors grown by metal organic chemical vapor deposition


    Contributors:
    Jolley, G. (author) / Tan, H.H. (author) / Fu, L. (author) / Jagadish, C. (author)


    Publication date :

    2005-01-01


    Size :

    145607 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English