Summary form only given. Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscillation. In this work, an angled-facet high-power diffraction-limited tapered GaAs-AlGaAs QW semiconductor amplifier operating at 809-nm was realized. Due to the angled facet structure, any residual reflection from the facets is fed back at a small angle with the signal propagation direction.


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    Title :

    Angled-facet high-power diffraction-limited tapered semiconductor amplifier


    Contributors:
    Yeh, P.S. (author) / Lu, C.C. (author) / Merritt, S. (author) / Heim, P. (author) / Cho, S.H. (author) / Dauga, C. (author) / Fox, S. (author) / Wood, C.E.C. (author) / Dagenais, M. (author)

    Published in:

    Proceedings of LEOS'94 ; 2 ; 399-400 vol.2


    Publication date :

    1994-01-01


    Size :

    153602 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English