Summary form only given. Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscillation. In this work, an angled-facet high-power diffraction-limited tapered GaAs-AlGaAs QW semiconductor amplifier operating at 809-nm was realized. Due to the angled facet structure, any residual reflection from the facets is fed back at a small angle with the signal propagation direction.
Angled-facet high-power diffraction-limited tapered semiconductor amplifier
Proceedings of LEOS'94 ; 2 ; 399-400 vol.2
1994-01-01
153602 byte
Conference paper
Electronic Resource
English
Angled-Facet High-Power Diffraction-Limited Tapered Semiconductor Amplifier
British Library Conference Proceedings | 1994
|35-dB Small-Signal-Gain High-Power Diffraction-Limited Tapered Semiconductor Amplifier
British Library Conference Proceedings | 1993
|British Library Conference Proceedings | 1998
|