Room temperature continuous wave operation of AlGaAsSb/GaInAsSb MQW diode lasers emitting beyond 3 μm were demonstrated. To increase the valence band offset of the quantum wells, AlGaInAsSb digital alloy was introduced as barriers in the active region. Pulsed mode operation at 3.25 μm up to 50 °C has been achieved.
Room Temperature CW Operation of Antimonide MQW Laser Diodes beyond 3 μm
2006-09-01
66844 byte
Conference paper
Electronic Resource
English
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