The type-II InAs-InGaSb-AlSb interband cascade (IC) laser diode structure has several advantages over the other approaches for the MIR lasers. The type-II IC structure uses interband transitions instead of intersubband, which eliminates the phonon relaxation path while retaining the advantages of electron recycling; therefore, the threshold current density could be much lower.


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    Title :

    High-power mid-IR interband cascade lasers


    Contributors:
    Lin, C.-H. (author) / Zhang, D. (author) / Yang, B.H. (author) / Zheng, J. (author) / Yang, R.Q. (author) / Pei, S.S. (author)


    Publication date :

    1998-01-01


    Size :

    156759 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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