In this paper, InAs/InGaAs quantum dot SOA emitting at greater than 1300 nm with gain as high as 18 dB at low with 100 mA pump current was designed and manufactured. The gain recovery dynamics of the QD-SOA sample was studied using a pump-probe set up. Extremely low linewidth enhancement factor and fast gain recovery make the device perspective for deployment in communication systems. The position of the gain peak and the bandwidth are practically temperature independent.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Quantum dot (InAs/InGaAs DWELL) semiconductor optical amplifier


    Contributors:
    Bakonyi, Z. (author) / Onishchukov, G. (author) / Tunnermann, A. (author) / Su, H. (author) / Lester, L.F. (author) / Gray, A.L. (author) / Newell, T.C. (author)


    Publication date :

    2003-01-01


    Size :

    95760 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    InAs Quantum Dot Development for Enhanced InGaAs Space Solar Cells

    Raffaelle, R. P. / Sinharoy, S. / King, C. W. et al. | British Library Conference Proceedings | 2005


    Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures

    Tartakovskii, A.I. / Kolodka, R.S. / Mowbray, D.J. et al. | IEEE | 2005


    InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 /spl mu/m

    Seong Hae Ok, / Young Tae Byun, / Chang Wan Son, et al. | IEEE | 2005


    InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55/spl mu/m

    Seong Hae Ok, / Young Tae Byun, / Chang Wan Son, et al. | IEEE | 2005


    GaAs-Based Bipolar Cascade InAs/InGaAs Quantum Dot VCSELs Emitting Near 1300 nm

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005