High temperature degradation of the efficiency of 1.5 /spl mu/m InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Origin of the high temperature performance degradation of 1.5 /spl mu/m lnGaAs(P)/lnP quantum well lasers


    Contributors:


    Publication date :

    2003-01-01


    Size :

    127544 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English