We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-/spl mu/m range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140/spl deg/C and 10 Gbit/s data transmission.


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    Title :

    1.3-/spl mu/m InGaAs vertical-cavity surface-emitting lasers


    Contributors:
    Hammara, M. (author) / Marcks, R. (author) / von Wurtemberg, R.M. (author) / Sundgren, P. (author) / Berggren, J. (author) / Larsson, A. (author) / Soderberg, E. (author) / Modh, P. (author) / Gustavsson, J. (author) / Ghisoni, M. (author)


    Publication date :

    2005-01-01


    Size :

    224271 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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