In the recent years, a great deal of research has been devoted to dead-space effects in avalanche photodiodes (APD) with submicron multiplication regions. Measurements and theoretical models have shown that the multiplication noise in SAM-APDs and in GaAs and InP p/sub +/in/sup +/ APDs decreases when the thickness of the multiplication layer is reduced. We present excess noise measurements of a Si ultraviolet-selective (UVS) APD with a 100 nm thick multiplication region. We show that these results are in excellent agreement with simulations using the dead-space model. The excess noise of our structure is much smaller than predicted by McIntyre's continuum theory.


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    Title :

    Dead-space effect on noise in Si UV-selective avalanche photodiode


    Contributors:
    Pauchard, A. (author) / Besse, P.A. (author) / Popovic, R.S. (author)


    Publication date :

    1999-01-01


    Size :

    170988 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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