I evaluate the factors that cause gain saturation-number of dot states, proximity of wetting layer and a non-thermal carrier distribution-using measurements of gain and carrier distribution in InGaAs quantum dot laser structures.


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    Title :

    Gain and carrier distribution in InGaAs quantum dot lasers


    Contributors:


    Publication date :

    2003-01-01


    Size :

    68950 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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