The polarization bistability of VCLs is studied theoretically with the consideration of dielectric Bragg reflectors, surface coatings, carrier induced refractive index inside the active layer as well as the intensity and wavelength of the injected light. The VCL has a built-in index guided structure and a GaAs-Al/sub 0.3/Ga/sub 0.7/As quantum well active layer. A rate-equation model is developed. It is shown that all-optical switching and memory operation can be achieved in VCLs by external optical injection, however, devices with suitable design of surface coating and Bragg reflectors are required.


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    Title :

    Polarization bistability of vertical cavity lasers under external optical injection


    Contributors:
    Yu, S.F. (author)


    Publication date :

    1996-01-01


    Size :

    208638 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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