GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.
GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth
2001-01-01
172651 byte
Conference paper
Electronic Resource
English
GaAs/AlGaAs Buried -Heterostructure Laser Diodes with Semi-Insulating GaInP:Fe Regrowth
British Library Conference Proceedings | 2001
|Novel Regrowth Technique for Semi-Insulating Buried Crescent Lasers
British Library Conference Proceedings | 1993
|British Library Conference Proceedings | 2001
|Semi-Insulating Buried Heterostructure Side-Injection Light-Controlled Bistable Laser Diode
British Library Conference Proceedings | 1996
|