We demonstrate a 1.55-/spl mu/m InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapor deposition. AI/sub 2/O/sub 3/-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through single mode fiber are reported in the speed of 2.5 Gbit/s.


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    Title :

    1.55-/spl mu/m bottom-emitting InAlGaAs VCSELs with Al/sub 2/O/sub 3//a-Si thin-film pairs as a top mirror


    Contributors:


    Publication date :

    2004-01-01


    Size :

    99906 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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    Czyszanowski, T. / Sarzała, R. / Dems, M. et al. | British Library Online Contents | 2008



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    Xiaoxue Zhao, / Change-Hasnain, C.J. / Hofmann, W. et al. | IEEE | 2006