We measured the terahertz (THz) emission from heavy-ion irradiated In/sub 0.35/Ga/sub 0.47/As photoconductive (PC) antennas excited at 1550 nm. The In/sub 0.35/Ga/sub 0.47/As layer irradiated at 10/sup 12/ cm/sup -2/ shows a carrier lifetime shorter than 200 fs, a steady-state mobility of 490 cm/sup 2/V/sup -1/s/sup -1/, and a dark resistivity of 3.1 /spl Omega/cm. The spectrum of the electric field radiated from the heavy-ion irradiated In/sub 0.35/Ga/sub 0.47/As antenna extends beyond 2 THz. Comparative measurements performed on In/sub 0.35/Ga/sub 0.47/As PC antennas irradiated at 10/sup 11/ cm/sup -2/ and 10/sup 12/ cm/sup -2/ demonstrate the impact of the defect center scattering on the photo-excited carrier mobility.


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    Title :

    Terahertz radiation from heavy-ion irradiated In/sub 0.35/Ga/sub 0.47/As photoconductive antenna at 1.55 /spl mu/m


    Contributors:
    Chimot, N. (author) / Mangeney, J. (author) / Joulaud, L. (author) / Crozat, P. (author) / Blary, K. (author) / Lampin, J.F. (author)


    Publication date :

    2005-01-01


    Size :

    376351 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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