Immersed heating and cooling elements establish desired temperature gradients. Method envisions use of high-pressure, Czochralski crystalgrowth apparatus as presently employed to grow gallium arsenide and gallium phosphide but modified to accept deep crucibles so deep layers of encapsulant used, plus X-ray or optical or sonic-imaging system to observe growth of crystal submerged in encapsulant. Method especially applicable to horizontal growth of ribbons of compound semiconductors.
Growing Single-Crystal Sheets by Controlled Cooling
NASA Tech Briefs ; 8 , 1
1984-04-01
Miscellaneous
No indication
English
Process for growing thin polished silicon sheets
NTRS | 1979
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