Immersed heating and cooling elements establish desired temperature gradients. Method envisions use of high-pressure, Czochralski crystalgrowth apparatus as presently employed to grow gallium arsenide and gallium phosphide but modified to accept deep crucibles so deep layers of encapsulant used, plus X-ray or optical or sonic-imaging system to observe growth of crystal submerged in encapsulant. Method especially applicable to horizontal growth of ribbons of compound semiconductors.


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    Title :

    Growing Single-Crystal Sheets by Controlled Cooling


    Contributors:

    Published in:

    Publication date :

    1984-04-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





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