Report describes design, characteristics, and performance of Si:Sb integrated array of infrared detectors, sensitivity of which extends to wavelength of about 31 micrometer, improvement over 28-micrometer limit of current Si:As impurity-band-conduction devices. Also describes electronics and special Dewar system developed to test device at low temperature to reduce background noise.


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    Title :

    Performance Of Infrared-Detector Array


    Contributors:

    Published in:

    Publication date :

    1988-02-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English







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