NASA Technical Memorandum discusses physical basis and dc and microwave characteristics of optically-controlled microwave devices described in literature. Emphasis on responses of GaAs/GaAlAs high-electron-mobility transistors (HEMT's) and GaAs metal/semiconductor field-effect transistors (MESFET's) to light. Devices used to detect radio-frequency modulation of optical signals, to control gains of amplifiers, and to provide injection locking of oscillators.
Optically-Controlled Microwave Devices And Circuits
NASA Tech Briefs ; 13 , 4
1989-04-01
Miscellaneous
No indication
English
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