Two improved readout circuits for micromagnet/Hall-effect random-access memories designed to eliminate current shunts introducing errors into outputs of older readout circuits. Incorporate additional switching transistors to isolate Hall sensors as needed.


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    Title :

    Improved Readout For Micromagnet/Hall-Effect Memories


    Contributors:

    Published in:

    Publication date :

    1993-09-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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