Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.
Nonvolatile GaAs Random-Access Memory
NASA Tech Briefs ; 18 , 3
1994-03-01
Miscellaneous
No indication
English
Nonvolatile GaAs Random-Access Memory
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