Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    Nonvolatile GaAs Random-Access Memory


    Contributors:

    Published in:

    Publication date :

    1994-03-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





    Odometer using nonvolatile memory

    Yates, P. | Tema Archive | 1984


    Nonvolatile memory writing device

    KAJITA ATSUSHI / HIROTA CHOJI | European Patent Office | 2025

    Free access

    Holographic random access memory

    Wenhai Liu, / Psaltis, D. | IEEE | 2000


    Holographic Random Access Memory

    Liu, W. / Psaltis, D. / Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2000