Dark current reduced by energy-discriminating quantum filter. Very long-wavelength-infrared hot-electron transistor developed. Device detects photons at wavelengths around 16 micrometers. Comprises photodector integrated with energy-discriminating quantum filter in multiple-quantum-well structure. Made of variously doped and undoped layers of GaAs (quantum wells) and Al(x)Ga(1-x)As (barriers between wells). In transistor, bound-to-continuum GaAs/Al(x)Ga(1-x)As multiple-quantum-well infrared photodectors (QWIP) serves as photosensitive emitter. Wide quantum well serves as base, and there is thick barrier between base and collector. Combination of barrier and base quantum well acts as energy-discriminating filter: electrons with higher energies pass through filter to collector, those with lower energies blocked and diverted from output-current path through base contact.
Long-Wavelength-Infrared Hot-Electron Transistor
NASA Tech Briefs ; 19 , 9
1995-09-01
Miscellaneous
No indication
English
Long-Wavelength Infrared Detector
NTRS | 1989
|Phototransistors For Long-Wavelength Infrared
NTRS | 1991
|Superlattice Long-Wavelength Infrared Sensors
NTRS | 1990
|Very Long Wavelength Quantum Well Infrared Photodetctor
NTRS | 1994
|