PtSi/Si Schottky-barrier devices detecting long-wavelength infrared (LWIR) photons demonstrated. Essential feature of one of these devices is p+ "doping spike"; layer of Si about 10 Angstrom thick, located at PtSi/Si interface, and doped with electron acceptors (boron atoms) at concentration between 5 x 10(19) and 2 x 10(20) cm(-3). Doping spikes extend cutoff wavelengths of devices to greater values than otherwise possible.
PtSi/Si LWIR Detectors Made With p+ Doping Spikes
NASA Tech Briefs ; 20 , 6
1996-06-01
Miscellaneous
No indication
English
PtSi-Si LWIR Detectors Made With p+ Doping Spikes
Online Contents | 1996
PtSi-Si MWIR Detectors Made With p+ Doping Spikes
Online Contents | 1996
PtSi/Si MWIR Detectors Made With p+ Doping Spikes
NTRS | 1996
|Hole-Impeded-Doping-Superlattice LWIR Detectors
NTRS | 1991
|LWIR heterodyne HgCdTe detectors [4340-10]
British Library Conference Proceedings | 2000
|