PtSi/Si Schottky-barrier devices detecting long-wavelength infrared (LWIR) photons demonstrated. Essential feature of one of these devices is p+ "doping spike"; layer of Si about 10 Angstrom thick, located at PtSi/Si interface, and doped with electron acceptors (boron atoms) at concentration between 5 x 10(19) and 2 x 10(20) cm(-3). Doping spikes extend cutoff wavelengths of devices to greater values than otherwise possible.


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    Title :

    PtSi/Si LWIR Detectors Made With p+ Doping Spikes


    Contributors:

    Published in:

    Publication date :

    1996-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English






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