SiO2 covers as thick as 5 mils have been deposited directly on Si solar cells at temperatures below 150 Cel with rates above 0.8 mils per hour by a novel plasma activated CVD process. Covers above 2 mils thick deform the cells excessively but do not delaminate. Stresses have been lowered by mixing Al2O3 into the cover through alterations in the CVD reactant gas mixture. In space power systems, these integral covers have promise for reducing system weight while simplifying cell assembly.


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    Title :

    Integral solar cell covers by plasma activated CVD


    Additional title:

    Integrale Abdeckungen fuer Sonnenzellen, die durch plasmaaktivierte chemische Abscheidung aus der Dampfphase hergestellt werden


    Contributors:
    Gurev, H.S. (author)


    Publication date :

    1984


    Size :

    5 Seiten, 6 Bilder, 4 Tabellen, 2 Quellen


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English






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