High efficiency, ultra-lightweight mechanically stacked tandem cells based on a GaAs CLEFT single-crystal thin upper cell and a polycrystalline thin film CuInSe2 lower cell are under development. The best performamce archieved to date is 17.4 % AMO for a 1 cm2 four-terminal tandem at 28 Cel. This demonstrated efficiency is sufficient to enable fabrication of modules with specific power of 500 W/kg including coverglass. Initial electron irradiation experiments have confirmed the radiation resistance of both subcells. A computer model has been developed which predicts that a realistic efficiency of 22.7 % AMO can be achieved for the present device structure when fully optimized. This tandem pair, when incorporating more advanced heterostructure GaAs cells is expected to yield an increased efficiency approaching 25 % AMO. Specific power for these advanced structures is expected to exceed 700 W/kg at the module level.
Thin film tandem GaAs/CuInSe2 solar cells for space power applications
GaAs/CuInSe2-Duennschicht-Tandem-Sonnenzellen fuer die Raumfahrt
1987
5 Seiten, 6 Bilder, 1 Tabelle, 25 Quellen
Conference paper
English
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