The trend in automotive electronics towards an integration of control circuits close to the actuators is a challenge for the chip manufacturers. Highly smart power devices must be capable to communicate with central car processors and to withstand harsh environmental conditions, such as high temperatures. A process for integrated DMOS, CMOS and bipolar devices has been developed on SDB-wafers, which demonstrates the feasibility of SOI substrates for automotive applications. The 150 V power transistors can work galvanically isolated from the logic circuits, reducing EMI susceptibility and leakage currents. Robust analogue circuits such as operational amplifiers or bandgap references can be integrated using the bipolar transistors. The overall performance of the process has been shown with a 2 A half-bridge circuit with a semi-custom gate array as a digital part.


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    Title :

    Bonded-wafer SOI smart power circuits in automotive applications


    Additional title:

    Smarte Leistungselektronik mit Bonded-Wafer-SOI für die Automobilindustrie


    Contributors:
    Harendt, C. (author) / Apel, U. (author) / Ifström, T. (author) / Graf, H.G. (author) / Höfflinger, B. (author)


    Publication date :

    1993


    Size :

    15 Seiten, 9 Bilder, 1 Tabelle, 13 Quellen




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English






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    Smart power ICs for automotive applications

    Lutz,R.W. / Sprague Semiconductor Group,US | Automotive engineering | 1987