GaAs films, both silicon doped and undoped, have been grown for the first time by molecular beam epitaxy (MBE) in low earth orbit in an ultra vacuum environment created by the Wake Shield Facility (WSF). Secondary ion mass spectrometry (SIMS) and x-ray diffraction data indicated nominal quality single crystal GaAs films with, however, oxygen and carbon contamination. The principal source of the contamination, the orbiter, will be reduced in future flights by WSF free flight away from the orbiter and resultant full utilization of the large volume ultra-vacuum environment of the WSF wake.
Advanced III-V materials processing in the vacuum of space
Fortschrittliche Verarbeitung von Drei-Fünf-Halbleitern im Vakuum des Weltraums
1994
5 Seiten, 5 Quellen
Conference paper
English
Halbleitertechnologie , Galliumarsenid , Dünnschichttechnik , Molekularstrahlepitaxie , Ultrahochvakuum , Weltraum , Raumfahrttechnik , Silicium , Fremdatom , Sauerstoff , Kohlenstoff , Schichtwachstum , Sekundärionenmassenspektrometrie , Röntgenstrahlbeugung , Einkristall , Gasdruck , MES-FET , Substrattemperatur , Epitaxialschicht , Dotierungsprofil
Advanced thin-film materials processing in the ultra-vacuum of space
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