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    Title :

    Influence of uniaxial pressure on the photoionization of h-centers in semiconductors [3890-33]



    Conference:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Publication date :

    1999-01-01


    Size :

    7 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Nr. 3890

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