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    Titel :

    Influence of uniaxial pressure on the photoionization of h-centers in semiconductors [3890-33]



    Kongress:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    7 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Nr. 3890

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