Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Observation of Degradation Recovery in 1.3-m GaInAsP-InP Inverted-Rib Semiconductor Lasers


    Contributors:
    Yoon, S. F. (author)

    Published in:

    Publication date :

    1994-01-01


    Size :

    55 pages



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    Unknown


    Classification :

    DDC:    621.3692



    Mass-Transported GaInAsP/InP Lasers

    Z. L. Liau / J. N. Walpole | NTIS | 1989


    1.3 m GaInAsP Lasers with Bragg Reflector Consisted of Semiconductor and Air

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997



    Temperature Sensitivity of Oscillation Wavelength in 1.3m- GaInAsP/InP Quantum-Well Semiconductor Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    High-Power GaInAs/GaInAsP/GalnP 980-nm Pump Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993