A device for determining a temperature of a semiconductor power switch with a built-in temperature-dependent gate resistor may include a non-inverting amplifier circuit comprising an operational amplifier and a feedback resistor. Inverting input of the operational amplifier may be connected to the semiconductor power switch such that a gain of the non-inverting amplifier circuit in a predefined frequency range of an input signal depends on the built-in temperature-dependent gate resistor and the feedback resistor and is a measure of the temperature of the semiconductor power switch. The feedback resistor may be disposed between a negative input and an output of the operational amplifier.


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    Title :

    TEMPERATURMESSUNG EINES HALBLEITERLEISTUNGSSCHALTELEMENTES


    Additional title:

    TEMPERATURE MEASUREMENT OF A POWER SEMICONDUCTOR SWITCHING ELEMENT
    MESURE DE TEMPÉRATURE D'UN ÉLÉMENT DISJONCTEUR À SEMI-CONDUCTEUR


    Contributors:

    Publication date :

    2022-06-29


    Type of media :

    Patent


    Type of material :

    Electronic Resource


    Language :

    German


    Classification :

    IPC:    G01K MEASURING TEMPERATURE , Messen der Temperatur / B62D MOTOR VEHICLES , Motorfahrzeuge / H03F Verstärker , AMPLIFIERS



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