A device for determining a temperature of a semiconductor power switch with a built-in temperature-dependent gate resistor may include a non-inverting amplifier circuit comprising an operational amplifier and a feedback resistor. Inverting input of the operational amplifier may be connected to the semiconductor power switch such that a gain of the non-inverting amplifier circuit in a predefined frequency range of an input signal depends on the built-in temperature-dependent gate resistor and the feedback resistor and is a measure of the temperature of the semiconductor power switch. The feedback resistor may be disposed between a negative input and an output of the operational amplifier.
TEMPERATURMESSUNG EINES HALBLEITERLEISTUNGSSCHALTELEMENTES
TEMPERATURE MEASUREMENT OF A POWER SEMICONDUCTOR SWITCHING ELEMENT
MESURE DE TEMPÉRATURE D'UN ÉLÉMENT DISJONCTEUR À SEMI-CONDUCTEUR
2022-06-29
Patent
Electronic Resource
German
TEMPERATURMESSUNG EINES HALBLEITERLEISTUNGSSCHALTELEMENTES
European Patent Office | 2020
|Springer Verlag | 2020
|Spektroskopische Temperaturmessung im Brennraum eines Ottomotors
Automotive engineering | 1997
|British Library Online Contents | 2006
Vorrichtung zur Masseverbindung eines Steuergeräts und zur Temperaturmessung
European Patent Office | 2018
|