Room-temperature lasing actions from Si by continuous-wave electrical pumping are demonstrated. Nanoparticle-modified metal-oxide-Si structures is used. Lasing occurs at the Si indirect-bandgap energy with threshold current 56 mA.
Room temperature Si laser at Si indirect-bandgap energy by electrical pumping
2005-01-01
221855 byte
Conference paper
Electronic Resource
English
Room Temperature Si Laser at Si Indirect-Bandgap Energy by Electrical Pumping
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