Room-temperature lasing actions from Si by continuous-wave electrical pumping are demonstrated. Nanoparticle-modified metal-oxide-Si structures is used. Lasing occurs at the Si indirect-bandgap energy with threshold current 56 mA.


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    Title :

    Room temperature Si laser at Si indirect-bandgap energy by electrical pumping


    Contributors:


    Publication date :

    2005-01-01


    Size :

    221855 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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