Room-temperature lasing actions from Si by continuous-wave electrical pumping are demonstrated. Nanoparticle-modified metal-oxide-Si structures is used. Lasing occurs at the Si indirect-bandgap energy with threshold current 56 mA.


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    Titel :

    Room temperature Si laser at Si indirect-bandgap energy by electrical pumping


    Beteiligte:
    Ching-Fuh Lin, (Autor:in) / Eih-Zhe Liang, (Autor:in) / Chu-Ting Huang, (Autor:in) / Kung-An Lin, (Autor:in) / Shiu-Jia Shu, (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    221855 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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