We report room-temperature photoluminescence from a Nd/sup 3+/ -doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd/sup 3+/ ions.
Photoluminescence from a Nd/sup 3+/-doped AIGaAs semiconductor structure
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 2 ; 2 pp. vol.2
2004-01-01
75241 byte
Conference paper
Electronic Resource
English
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