We report room-temperature photoluminescence from a Nd/sup 3+/ -doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd/sup 3+/ ions.


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    Title :

    Photoluminescence from a Nd/sup 3+/-doped AIGaAs semiconductor structure


    Contributors:
    Ullmann, K. (author) / Su, M. (author) / Silverman, K.L. (author) / Berry, J.J. (author) / Harvey, T.E. (author) / Mirin, R.P. (author)


    Publication date :

    2004-01-01


    Size :

    75241 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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