We report room-temperature photoluminescence from a Nd/sup 3+/ -doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd/sup 3+/ ions.
Photoluminescence from a Nd/sup 3+/-doped AIGaAs semiconductor structure
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 2 ; 2 pp. vol.2
01.01.2004
75241 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch