We report the first demonstration of a terahertz photomixer made of ion-irradiated In0.53Ga0.47As lattice-matched to InP and fiber-optic coupled with the 1.55 μm wavelength drive lasers. The detected signal is at the most 15 dB lower than the one obtained from similar photomixers fabricated from low-temperature-grown GaAs.
Photomixing at 1.55 μm in ion-irradiated In0.53Ga0.47As on InP
2006-09-01
1210246 byte
Conference paper
Electronic Resource
English
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