Highly-resistive low-temperature grown InGaAs, with a sub-500 fs carrier lifetime, is used as an all-optoelectronic continuous-wave terahertz photomixer system based on diode lasers. Interdigitated electrodes fabricated on epitaxial low-temperature grown In/sub 0.3/Ga/sub 0.7/As are used as photomixers to generate and detect radiation from microwave frequencies (<100 GHz) to beyond 1.0 THz.


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    Title :

    Continuous-wave terahertz photomixing in low-temperature InGaAs


    Contributors:
    Baker, C. (author) / Gregory, I.S. (author) / Tribe, W.R. (author) / Evans, M.J. (author) / Missous, M. (author) / Linfield, E.H. (author)


    Publication date :

    2004-01-01


    Size :

    166424 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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