InGaN multiple quantum well laser diodes have been fabricated by MBE. Lasers grown on GaN template substrates and on free-standing GaN substrates exhibit a minimum threshold current density of 7 kAcm/sup -2 /at room temperature.


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    Title :

    InGaN laser diodes fabricated by MBE


    Contributors:
    Heffernan, J. (author) / Kauer, M. (author) / Johnson, K. (author) / Zellweger, C. (author) / Bousquet, V. (author) / Hooper, S.E. (author)


    Publication date :

    2004-01-01


    Size :

    114655 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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