InGaN multiple quantum well laser diodes have been fabricated by MBE. Lasers grown on GaN template substrates and on free-standing GaN substrates exhibit a minimum threshold current density of 7 kAcm/sup -2 /at room temperature.


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    Titel :

    InGaN laser diodes fabricated by MBE


    Beteiligte:
    Heffernan, J. (Autor:in) / Kauer, M. (Autor:in) / Johnson, K. (Autor:in) / Zellweger, C. (Autor:in) / Bousquet, V. (Autor:in) / Hooper, S.E. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    114655 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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