InGaN multiple quantum well laser diodes have been fabricated by MBE. Lasers grown on GaN template substrates and on free-standing GaN substrates exhibit a minimum threshold current density of 7 kAcm/sup -2 /at room temperature.
InGaN laser diodes fabricated by MBE
01.01.2004
114655 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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