Reactive ion etching is proposed as an alternative to wet etching silicon to form optical alignment grooves for optical interconnection in silicon. The dependence of the etched groove shape as a function of RIE pressure was measured. The groove shape was measured as the degree of groove conformance to a semicircular profile. An optimal pressure of 300 mTorr was determined and the undercutting and depth of the etched grooves as a function of photo-mask was measured.
CMOS-compatible process for fibre alignment grooves in silicon
2002-01-01
270095 byte
Conference paper
Electronic Resource
English
CMOS-Compatible Process for Fibre Alignment Grooves in Silicon
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