Reactive ion etching is proposed as an alternative to wet etching silicon to form optical alignment grooves for optical interconnection in silicon. The dependence of the etched groove shape as a function of RIE pressure was measured. The groove shape was measured as the degree of groove conformance to a semicircular profile. An optimal pressure of 300 mTorr was determined and the undercutting and depth of the etched grooves as a function of photo-mask was measured.


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    Title :

    CMOS-compatible process for fibre alignment grooves in silicon


    Contributors:
    Chaffey, J. (author) / Austin, M. (author) / Switala, I. (author) / Grant, K. (author)


    Publication date :

    2002-01-01


    Size :

    270095 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    CMOS-Compatible Process for Fibre Alignment Grooves in Silicon

    Chaffey, J. / Austin, M. / Switala, I. et al. | British Library Conference Proceedings | 2002


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