Reactive ion etching is proposed as an alternative to wet etching silicon to form optical alignment grooves for optical interconnection in silicon. The dependence of the etched groove shape as a function of RIE pressure was measured. The groove shape was measured as the degree of groove conformance to a semicircular profile. An optimal pressure of 300 mTorr was determined and the undercutting and depth of the etched grooves as a function of photo-mask was measured.


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    Titel :

    CMOS-compatible process for fibre alignment grooves in silicon


    Beteiligte:
    Chaffey, J. (Autor:in) / Austin, M. (Autor:in) / Switala, I. (Autor:in) / Grant, K. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    270095 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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