The electro-optic imaging system has been used to observe the dynamics of photoconductive switching in GaAs. GaAs has two distinct regions of operation. At biases below 3-6 kV/cm (depending on material preparation) the switches behave in a simple fashion. The field collapses with the integral of the absorbed light and then recovers as the carriers recombine. Above 6 kV/cm the electric field across the switches exhibit transient anomalies. This technique could also be used for other semiconductor devices such as integrated circuits.
2-D electro-optic sampling in GaAs photoconductive switches
Proceedings of LEOS'94 ; 2 ; 23-24 vol.2
1994-01-01
182297 byte
Conference paper
Electronic Resource
English
2-D Electro-Optic Sampling in GaAs Photoconductive Switches
British Library Conference Proceedings | 1994
|Fabrication of High-Gain GaAs Photoconductive Switches
British Library Online Contents | 1998
|Monte Carlo Simulation of High-Gain GaAs Photoconductive Semiconductor Switches
British Library Online Contents | 1998
|Microwave On/Off Ratio Enhancement of GaAs Photoconductive Switches at Nanometer Scale
British Library Online Contents | 2012
|